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AXT Inc AXTI.OQ (NASDAQ Stock Exchange Global Select Market)

3.95 USD
-- (--)
As of Sep 17
Previous Close 3.95
Open --
Volume --
3m Avg Volume 56,685
Today’s High --
Today’s Low --
52 Week High 7.65
52 Week Low 3.24
Shares Outstanding (mil) 38.65
Market Capitalization (mil) 361.42
Forward P/E 47.64
Dividend (Yield %) -- ( -- )

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RECOMMENDATION

Sell Hold Buy
1.80 Mean rating from 5 analysts

KEY STATS

Revenue (mm, USD)
FY19
45
FY18
102
FY17
99
FY16
81
EPS (USD)
FY19
0.006
FY18
0.235
FY17
0.250
FY16
0.164
*Note: Units in Millions of U.S. Dollars
**Note: Units in U.S. Dollars

KEY RATIOS

Price to Earnings (TTM)
vs sector
47.64
817.21
Price to Sales (TTM)
vs sector
4.19
2.48
Price to Book (MRQ)
vs sector
2.17
2.25
Price to Cash Flow (TTM)
vs sector
32.86
12.07
Total Debt to Equity (MRQ)
vs sector
0.00
15.95
LT Debt to Equity (MRQ)
vs sector
0.00
8.35
Return on Investment (TTM)
vs sector
4.25
14.71
Return on Equity (TTM)
vs sector
4.65
15.33

EXECUTIVE LEADERSHIP

Jesse Chen
Chairman of the Board, Since 2017
Salary: --
Bonus: --
Morris Young
Chief Executive Officer, Director, Since 2014
Salary: $412,308.00
Bonus: $320,889.00
Gary Fischer
Chief Financial Officer, Corporate Secretary, Since 2017
Salary: $279,616.00
Bonus: $136,320.00
David Chang
Independent Director, Since 2000
Salary: --
Bonus: --
Leonard LeBlanc
Independent Director, Since 2003
Salary: --
Bonus: --

COMPANY PROFILE

Sector: Technology
Industry: Semiconductors
Address:

4281 Technology Dr
FREMONT   CA   94538-6339

Phone: +1510.4384734
Site: www.axt.com/

AXT, Inc. (AXT) is a developer and producer of a compound and single element semiconductor substrates, also known as wafers. The dominant substrates used in producing semiconductor chips and other electronic circuits are made from silicon. The Company is engaged in the design, development, manufacture and distribution of compound semiconductor substrates and sale of materials. The Company provides alternative or specialty materials in the form of substrates or wafers, including compound and single element substrates. It's compound substrates combine indium with phosphorous (InP) or gallium with arsenic (GaAs). Its single element substrates are made from germanium (Ge). The Company uses its Vertical Gradient Freeze (VGF) technique for growing single crystal Indium Phosphide (InP), Gallium Arsenide (GaAs) and Germanium (Ge) ingots used to produce wafers for diverse electronic and optoelectronic device and circuit applications.

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